221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com sensitron semiconductor standard igbt modules with gate drivers features: high power density low saturation voltage (v ce(sat) ) low thermal resistance (r q jc ) industrial igbt product map i c (amps) config- uration v ecs (v) 25 50 100 half- bridge 600 spm2g48-60 spm2g65-60 SPM2G75-60 spm2g85-60 h-bridge 600 spm4g48-60 - 3-phase bridge 600 spm6g48-60 spm6g65-60 spm6g50-60 (1) (1) this device is available with opto-isolated digital interface inputs. spmxgxx-xx
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com standard hermetic igbt modules with gate drivers high speed igbt devices with fast reverse recovery diodes igbt characteristics part number v ces volts continuous collector current i c @ tc=90 o c amps continuous collector current i c @ t c =25 o c amps pulsed collector current t c =25 o c 1 ms amps v ce(sat) @ i c v a fall time t f nsec maximum p d @ t c =25 o c watts r q jc o c/w package style & schematic configuration option package schematic spm2g48-60 600 24 48 96 2.5 24 150 162 0.77 pkg-2 opt-1 spm2g65-60 600 35 65 130 2.1 50 50 200 0.55 pkg-2 opt-1 SPM2G75-60 600 50 75 200 2.5 50 200 357 0.35 pkg-2 opt-1 spm2g85-60 600 75 85 200 2.0 70 50 357 0.35 pkg-2 opt-1 spm4g48-60 600 24 48 96 2.5 24 150 162 0.77 pkg-2 opt-2 spm6g48-60 600 24 48 96 2.7 24 275 162 0.77 pkg-4 opt-3 spm6g65-60 600 35 65 130 2.1 50 50 200 0.55 pkg-4 opt-3 reverse diode characteristics part number current rating i favm @ d=0.5, tc amps o c v f @ i f t j =25 o c volts amps i rm @ i f typ t j =25 o c v r =100v amps amps t rr @ - di/ dt t j =25 o c typ ns a/ms thermal resistance r q jc o c/w spm2g48-60 spm4g48-60 spm6g48-60 30 90 1.55 30 10 40 50 100 0.95 spm2g65-60 SPM2G75-60 spm2g85-60 spm6g65-60 50 90 1.35 50 15 50 95 100 0.75 gate driver characteristics characteristic symbol min. typ . max. unit logic dc supply v cc 10 18 20 v under voltage lockout v ccuv 7 9.7 v logic input voltage (hin & lin) hin, lin, sd -0.3 - v cc +0.3 v notes: 1- bold part numbers indicate preferred devices. 2- for devices with custom ratings, please contact the factory or a sensitron sales representative for details.
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com schematic diagrams for igbt modules with gate drivers gate driver output +v co m boot strap 10 m f v cc hin sd lin com (a) half-bridge igbt module (option-1) (b) three-phase bridge igbt module (option-3) +v phase a phase b phase c gat e com boot strap vcc hin1 sd1 lin1 com hin2 sd2 lin2 com hin3 sd3 lin3 com 10 m f pin assignment for pkg-4 function pin # vcc 1 hin1 2 sd1 3 lin1 4 com 5 hin2 6 sd2 7 lin2 8 com 9 hin3 10 sd3 11 lin3 12 com 13 +v 24,25,26 pha 22,23 phb 19,20 phc 17,18 pin assignment for pkg-2 function pin # vcc 2 hin1 3 sd1 4 lin1 5 com 6 +v 11,12 out 9,10 com 7,8 pin assignment for pkg-3 function pin # vcc 4 hin1 5 sd1 6 lin1 7 com 8 +v 16,17,18 out 13,14,15 com 10,11,12 v cc hin1 lin1 hin2 lin2 com gate drive boot strap 10 m f +v com out 1 out 2 pin assignment for pkg-2 function pin # vcc 1 hin1 2 lin1 3 hin2 4 lin2 5 com 6 +v 12 out1 10, 11 out2 8, 9 com 7 (a) h-bridge igbt module (option-2)
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com package options for igbt & mosfet modules with gate drivers 1.350 (34.29) .750 (19.05) 1.600 (40.64) 1.850 (46.99) .150(3.81) 1.300 (33.02) 1.050 (26.67) .125 (3.18) .500 (12.70) min. .125(3.18) 0.155 (3.94) 0.060 (1.52) dia. 0.260 (6.60) 0.050 (1.27) 12 7 8 9 10 11 1 6 5 4 3 2 12 7 8 9 10 11 1 6 5 4 3 2 0.280 0.240 (7.11 6.10) 1.020 0.980 (25.91 24.89) 1.530 1.510 (38.86 38.35) 0.055 0.045 (1.40 1.14) 0.635 0.615 (16.13 15.62) 0.135 0.115 (3.43 2.92) 0.161 0.151 (4.09 3.84) 0.175 0.165 (4.44 4.19) 1.020 0.980 (25.91 24.89) 0.195 0.180 (4.95 4.57) 0.045 0.035 (1.14 0.89) 0.250 min (6.35) 0.160 0.140 (4.06 3.56) dia r (a) package-1 (pkg-1) (b) package-2 (pkg-2) 3.00? 2.75? 2.10? 1.86? 1.60? 0.375? 0.215? 0.080? 0.200 f 0.050? with glass bead f 0.110? 26 25 24 23 22 21 20 19 18 17 16 15 14 1 2 3 4 5 6 7 8 9 10 11 12 13 f 0.130? 0.123? 2.25? 2.00? 1 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 2.10? 1.86? .60? 0.375? 0.215? 0.080? 0.200 ? f 0.050? with glass bead f 0.110? f 0.130? 0.123 (c) package-1 (pkg-3) (d) package-2 (pkg-4)
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com spm6g50-60 t sensitron semiconductor technical data data sheet 687, rev. - three-phase igbt bridge 600 volt, 50 amp electrical characteristics per igbt device (tj=25 0 c unless otherwise specified) p p a a r r a a m m e e t t e e r r s s y y m m b b o o l l m m i i n n t t y y p p m m a a x x u u n n i i t t igbt specifications collector to emitter breakdown voltage i c = 250 m a, v ge = 0v bv ces 600 - v continuous collector current t c = 25 o c t c = 90 o c i c - - 50 40 a pulsed collector current, 1ms i cm 130 a short circuit time, v ge = 15v, v ce = 500v, t j = 125 o c di/ dt < 300 a/ ?sec, i c < 300a t sc 10 ?sec gate to emitter voltage v ge - - +/-20 v gate-emitter leakage current , v ge = +/-20v i ges +/- 100 na gate threshold voltage, i c =2ma v g e(th) 4.0 7.0 v zero gate voltage collector current v ce = 600 v, v ge =0v t i =25 o c v ce = 480 v, v ge =0v t i =125 o c i ces - - 1.0 3.0 ma ma collector to emitter saturation voltage, t c = 25 o c i c = 50a, v ge = 15v, t c = 125 o c v ce(sat) - 2.1 2.4 2.5 2.8 v input capacitance output capacitance reverse transfer cap. v ce = 25 v, v ge = 0 v, f = 1 mhz c ies c oes c res 2800 300 200 pf turn on delay time rise time turn off delay time fall time turn off energy loss ( t j = 125 o c, i c = 40a, v ge = 15v, inductive load, v cc = 300 v, r g = 22 w t d(on) t r t d(off) t f e off e on - - - - - 100 50 300 40 1.5 2.0 - - - - - - nsec mj mj maximum thermal resistance r q jc - - 0.7 o c/w
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com spm6g50-60 ultrafast diodes rating and characteristics parameter symbol min typ max unit diode peak inverse voltage piv 600 - v continuous forward current, t c = 90 o c i f 50 a forward surge current, t p = 10 msec i fsm 400 a diode forward voltage, i f = 50a v f - 1.2 1.7 v diode reverse recovery time diode reverse recovery charge (i f =25a, v rr =300v , di/dt=500 a/ m s) t rr q rr - 150 1.5 200 2.5 nsec ?c maximum thermal resistance r q jc - - 1.0 o c/w maximum and storage junction temperature t jmax -55 - 150 o c gate driver parameter symbol min typ max unit supply voltage vcc 10 15 20 v input on current hin, lin 1.6 - 5.0 ma input reverse breakdown voltage bv in 5.0 - - v input forward voltage @ i in = 5ma v f - 1.5 1.7 v under voltage lockout vccuv 7.0 - 9.7 v itrip threshold voltage (1 ) itrip th 0.4 0.49 0.58 v turn on delay t ond - - tbd nsec turn on rise time t r - - tbd nsec turn off delay t offd - - tbd nsec turn off fall time t f - - tbd nsec input-output isolation voltage 1000 - - v (1 ) once itrip reaches threshold, the driver latches off. this condition can be reset by holding all three low-side inputs high for more than 10 m sec or by recycling the v cc supply. gate driver truth table hin1,2,3 lin1,2,3 ho1,2,3 lo1,2,3 0 0 0 0 0 1 1 0 1 0 0 1 1 1 0 0
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com spm6g50-60 schematic diagram: input resistance selection: recommended value for r in is 1k w hin1 ,2,3 lin1 ,2,3 r in recommended input resistance r in k w i in ma 2.15 1.6 1.1 3 0.68 5 ceramic cap 0.20 m f, 600v 1.5 m f 5 w 0.01 m f 3.0 m f 30kw 1.5 m f gate driver 5w 0.47 m f 3.0 m f lin2, pin6 5w 200kw 30kw 1.5 m f 5w 0.47 m f lin1, pin7 5w 200kw 5 w 30kw 1.5 m f 5w 0.47 m f lin3, pin5 pwr-grnd, pin2 5w 200kw 5 w +v ph1 v cc hin1 lin1 sgn-gnd pin ,8 hin2 lin2 hin 3 lin3 v ss v so itrip 40w itrip, pin10 itrip, pin9 rtn d3 d4 d5 d6 d1 d2 hin3, pin13 hin1, pin15 +15v pin1 q1h q1l q2h q2l q3h q3l hin2, pin14 sgn-gnd pin ,4 gnd ph2 com ph3
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com spm6g50-60 package drawing: signal terminals microminiature d connector: f = 0.2 0.53 1.5 2.60 0.75 0.23 0.11 0.80 3.62 ph3 ph2 ph1 power pins copper base com +v 0.25 0.20 0.80 0.50 0.42 copper base 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 pins : f = 0.02 , 0.05 center-to-center signal pins pin # function 1 +15v 2 pwr- grnd 3 nc 4 sgn- grnd 5 lin3 6 lin2 7 lin1 8 sgn- grnd 9 itrip- rtn 10 itrip 11 nc 12 nc 13 hin3 14 hin2 15 hin1
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